Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study. (September 2018)

• Record Type: Journal Article
• Authors: Marcello, G.; Meda, E.; Medda, M.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 294
• Page End: 298
• Publication Date: 2018-09
• Subjects: Automotive -- ICs defect localization -- Quiescent power supply current: IDDQ -- EMMI -- Emission microscope; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.06.079
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Quiescent current (IDDQ) test demonstrated over years its effectiveness in identifying the ICs failure root causes. In this paper three cases study are presented, all based on the use of IDDQ test during Emission Microscopy (EMMI). The DUTs analyzed, implemented in different technological solutions (BCD and BiCMOS), belong to the automotive market segment. In the cases here described the emission microscopy approach from both front and backside has been considered. Different physical analysis techniques have been used in order to characterize morphological marginalities or abnormalities. Results from the three cases should be good examples to prove how this kind of approach - fault isolation driven by IDDQ - is a powerful technique able to identify quickly and precisely failure root causes in high complexity ICs, independently of design and technology, and even when Automatic Test Pattern Generation (ATPG) is not available. Preferred presentation: [] Oral. [] Poster. [X] No preference. Preferred track (please, tick one or number 1 to 3 tracks in order of preference: 1 = most suiting, 3 = least suiting). [3 ] A - Quality and Reliability Assessment Techniques and Methods for Devices and Systems [] B1 - Si Technologies & Nanoelectronics: Hot Carriers, High K, Gate Materials [] B2 - Si Technologies & Nanoelectronics: Low K, Cu Interconnects [] B3 - Si Technologies & Nanoelectronics: ESD, Latch-up [1 ] C - Progress in Failure Analysis: Defect Detection and Analysis [] D - Reliability of Microwave and Compound Semiconductors Devices [2 ] E1 - Power Devices Reliability: Silicon and Passive [] E2 - Power Devices Reliability: Wide Bandgap Devices [] F - Packaging and Assembly Reliability [] G - MEMS, Sensors and Organic Electronics Reliability [] H - Photonics Reliability [] I - Extreme Environments and Radiation [] K - Renewable Energies Reliability [] L - Modeling for Reliability [] SS1 (Special Session) - Reliability in Traction Applications