E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs. (July 2019)

• Record Type: Journal Article
• Authors: Kim, Kibeom; Choi, Junsung; Woo, Seongho; Cho, Jaeyong; Ahn, Seungyoung
• Is Part Of: Microelectronics and reliability. Volume 98(2019)
• Page Start: 161
• Page End: 164
• Publication Date: 2019-07
• Subjects: Through-silicon via (TSV) -- Three-dimensional integrated circuit (3-D IC) -- Metal-oxide-semiconductor (MOS) -- Keep-out zone (KOZ); Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.05.007
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: An increase in the number of the through‑silicon vias (TSVs) per unit area causes the electrical channel in neighboring semiconductor devices to be closer to the depletion region induced by the electric-field (E-field) around the TSV. A keep-out zone (KOZ) is required to ensure the proper operation of three-dimensional integrated circuits (3-D ICs) using TSVs given these negative effects. The proposed method with which to determine the KOZ for 3-D ICs includes procedures for extracting the charges produced during the TSV formation process and for calculating the depletion region from a nonlinear metal-oxide-semiconductor (MOS) capacitance model. The results of a comparison of the proposed method with a previous method show that the charge carriers in the depletion region and charge-type imperfections of in TSV must be considered for an accurate KOZ. Highlights: A electric-induced keep-out zone (KOZ) determination method for TSVs is proposed. The KOZ is formed up to the depletion region to protect all logic cells from the E-field around the TSVs. The effects of charge carriers and charge-type imperfections affect the determination of the KOZ.