Cite
MLA Citation
Nan‐Hung Cheng et al.. “Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure.” IEEJ transactions on electrical and electronic engineering, vol. 14, no. 7, 2019, pp. 1091–1094. http://access.bl.uk/ark:/81055/vdc_100086233009.0x00000d