Cite
HARVARD Citation
Tomaszewski, D. et al. (2019). A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs. Solid-state electronics. pp. 184-190. [Online].
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Tomaszewski, D. et al. (2019). A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs. Solid-state electronics. pp. 184-190. [Online].