Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells. (September 2019)

• Record Type: Journal Article
• Authors: Navarro, S.; Marquez, C.; Lee, K.H.; Navarro, C.; Parihar, M.; Park, H.; Galy, P.; Bawedin, M.; Kim, Y.T.; Cristoloveanu, S.; Gamiz, F.
• Is Part Of: Solid-state electronics. Volume 159(2019)
• Page Start: 12
• Page End: 18
• Publication Date: 2019-09
• Subjects: Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.03.040
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Thin-oxide Z 2 -FET cells operating as capacitor-less DRAM devices are experimentally demonstrated. Both the retention time and memory window demonstrate the feasibility of implementing this cell in advanced 28 nm node FDSOI technology. Nevertheless a performance drop and higher variability with respect to thicker oxide Z 2 -FET cells are observed.