Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX. (September 2019)

• Record Type: Journal Article
• Authors: Han, Qinghua; Aleksa, Paulus; Tromm, Thomas Carl Ulrich; Schubert, Juergen; Mantl, Siegfried; Zhao, Qing-Tai
• Is Part Of: Solid-state electronics. Volume 159(2019)
• Page Start: 71
• Page End: 76
• Publication Date: 2019-09
• Subjects: Negative capacitance MOSFET -- Steep slope -- Stability -- Ferroelectricity; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.03.037
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device.