Cite
HARVARD Citation
Li, X. et al. (2017). Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor. Nature communications. 8 (1), pp. 1-7. [Online].
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Li, X. et al. (2017). Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor. Nature communications. 8 (1), pp. 1-7. [Online].