Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor. Issue 1 (December 2017)

• Record Type: Journal Article
• Authors: Li, Xiao-Xi; Fan, Zhi-Qiang; Liu, Pei-Zhi; Chen, Mao-Lin; Liu, Xin; Jia, Chuan-Kun; Sun, Dong-Ming; Jiang, Xiang-Wei; Han, Zheng; Bouchiat, Vincent; Guo, Jun-Jie; Chen, Jian-Hao; Zhang, Zhi-Dong
• Is Part Of: Nature communications. Volume 8:Issue 1(2017)
• Page Start: 1
• Page End: 7
• Publication Date: 2017-12
• Subjects: Biology -- Periodicals; Physical sciences -- Periodicals; 505
• DOI: 10.1038/s41467-017-01128-9
• Languages: English
• ISSNs: 2041-1723

Abstract

Abstract Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolarpn tonp diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel. Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversiblepn tonp diode behaviour.