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HARVARD Citation
Gelczuk, Ł. et al. (2017). Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Scientific reports. 7 (1), pp. 1-11. [Online].
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Gelczuk, Ł. et al. (2017). Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Scientific reports. 7 (1), pp. 1-11. [Online].