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APA Citation
Sobus, J., Bencheikh, F., Mamada, M., Wawrzinek, R., Ribierre, J., Adachi, C., Lo, S., & Namdas, E. B. (2018). high Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence. Advanced functional materials, 28, n/a. http://access.bl.uk/ark:/81055/vdc_100066422484.0x00001a