Limitation of Na-H codoping in achieving device-quality p-type ZnO. (October 2017)

• Record Type: Journal Article
• Authors: Li, Junqiang; Liu, Yaoping; Mei, Zengxia; Vines, Lasse; Kuznetsov, Andrej; Du, Xiaolong
• Is Part Of: Materials science in semiconductor processing. Volume 69(2017)
• Page Start: 28
• Page End: 31
• Publication Date: 2017-10
• Subjects: Defects -- Doping -- SIMS -- MBE; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.01.019
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Na-H in-situ codoping in single crystalline ZnO films was carried out by plasma assisted molecular beam epitaxy. It is found that Na-H codoping dramatically enhances the formation of substitutional Na (NaZn ) in ZnO lattice due to the unchanged Fermi level. The annealing temperature needed to kick out H, however, is very high, which would concurrently result in a notable decrease of Na concentration to its solution limit in ZnO, namely, in the range of 10 17 cm −3 . Our results suggest that Na-H codoping method has a limited effect on enhancing the p-type conductivity of ZnO.