Control of hexagonal boron nitride dielectric thickness by single layer etching. Issue 21 (12th April 2019)

• Record Type: Journal Article
• Authors: Ma, Zichao; Prawoto, Clarissa; Ahmed, Zubair; Xiao, Ying; Zhang, Lining; Zhou, Changjian; Chan, Mansun
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 21(2019)
• Page Start: 6273
• Page End: 6278
• Publication Date: 2019-04-12
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc00896a
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Single layer etching of h-BN is achieved using a two-step remote plasma process. Abstract : This work demonstrates a layer-by-layer etching technique to control the hexagonal boron nitride (h-BN) film thickness with single layer precision. The method involves top layer h-BN deformation via oxygen-radical adsorption and then top layer removal by nitrogen-ion bombardment. An ultimate monolayer h-BN with a smooth surface can be obtained from a thick flake by using the method repeatedly. The mechanism of the single layer h-BN etching is verified using X-ray photoelectron spectroscopy analysis and first principle molecular dynamics. Characterization of the dielectric properties of a thickness-reduced h-BN film shows a desirable low leakage current, large capacitance and high breakdown field properties as a gate dielectric material.