Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure. (August 2018)

• Record Type: Journal Article
• Authors: Zhang, D.; Li, T.R.; Zhou, J.W.; Jiang, Y.C.; Ren, B.; Huang, J.; Zhang, J.M.; Wang, L.; Gao, J.; Wang, L.J.
• Is Part Of: Microelectronics and reliability. Volume 87(2018)
• Page Start: 52
• Page End: 56
• Publication Date: 2018-08
• Subjects: Asymmetric resistive switching -- FIBJ -- Amorphous carbon -- Micro-gap -- SCLC theory; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.05.021
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Using a simple fields induced mass motion method, Au/ a -C:Co/Au planar structures with micro-gap Au electrodes were fabricated. Asymmetric current-voltage characteristics and resistive switching behaviours were observed in these cells. Reliable performance, with a reasonable ON/OFF ratio of >4, stable endurance of >200 cycles, and good retention of >10 5 s, were achieved at the read voltage of −3.6 V. Space charge limited current (SCLC) theory with an asymmetric potential barrier caused by different densities of traps was proposed to explain the asymmetric resistive switching behaviour. Highlights: In this paper, Au/ a -C:Co/Au planar structures with micro-gap Au electrodes were fabricated using FIBJ technique. Asymmetric current-voltage characteristics and resistive switching behaviour were observed in these cells. Good endurance and retention were obtained in the asymmetric structures cell. Space charge limited current theory with an asymmetric potential barrier was proposed to explain the ARS effect.