Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Brauer, Elizabeth J.; Turowski, Marek; McDonough, James M.
• Is Part Of: VLSI design. Volume 8:Issue 1/4(1998)
• Page Start: 393
• Page End: 399
• Publication Date: 1998
• Subjects: Numerical methods -- semiconductor -- simulation -- drift-diffusion -- decomposition; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/96170
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : A new numerical method for semiconductor device simulation is presented. The additive decomposition method has been successfully applied to Burgers' and Navier-Stokes equations governing turbulent fluid flow by decomposing the equations into large-scale and small-scale parts without averaging. The additive decomposition (AD) technique is well suited to problems with a large range of time and/or space scales, for example, thermal-electrical simulation of power semiconductor devices with large physical size. Furthermore, AD adds a level of parallelization for improved computational efficiency. The new numerical technique has been tested on the 1-D drift-diffusion model of a p-i-n diode for reverse and forward biases. Distributions of φ, n and p have been calculated using the AD method on a coarse large-scale grid and then in parallel small-scale grid sections. The AD results agreed well with the results obtained with a traditional one-grid approach, while potentially reducing memory requirements with the new method.