Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Kan, Edwin C.; Jin, Gyoyoung; Yu, Zhiping; Dutton, Robert W.
• Is Part Of: VLSI design. Volume 6:Issue 1/4(1998)
• Page Start: 299
• Page End: 302
• Publication Date: 1998
• Subjects: device simulation -- energy transport -- impact ionization -- numerical method; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/76350
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : When carrier temperatures are used to model impact ionization with self-consistent cooling effects, anomalous negative differential resistance (NDR) was found in diode breakdown simulation. Possible mechanisms responsible for the NDR are analyzed.