Time Dependence of Ion-Migration Effects in NiCr Resistor Films. (1978)

• Record Type: Journal Article
• Authors: Smith, U.; Hoffmann, R.
• Is Part Of: Electrocomponent science and technology. Volume 5:Number 3(1978)
• Page Start: 159
• Page End: 164
• Publication Date: 1978
• Subjects: Electronics -- Periodicals; Electronic circuits -- Periodicals; 621.3815
• DOI: 10.1155/APEC.5.159
• Languages: English
• ISSNs: 0305-3091

Abstract

Abstract : This paper reports the effects of ion-migration on NiCr-resistor films sputtered on the substrates Corning 0211 and 7059. Graphs showing the influence of magnitude and polarity of the bias potential, of the separation between resistor and counter-electrode, and of reversal of bias polarity are given for Corning 0211 substrates at a temperature of 100℃ and in a relative humidity of 0.7% for periods of time ranging up to 1000 hours. Results for resistors having a NiCr-oxide layer between the film and the Corning 0211 substrate as well as for NiCr resistors on Corning 7059 substrate are also presented. Previous use of a bias-electrode at positive potential is shown to lead to a depletion-recovery effect. The physical interpretation of the experimental features is given in terms of a model involving anodic oxidation at the positive electrode and formation of a low conductivity deposit at the negative electrode.