Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Oyafuso, F.; von Allmen, P.; Grupen, M.; Hess, K.
• Is Part Of: VLSI design. Volume 6:Issue 1/4(1998)
• Page Start: 367
• Page End: 371
• Publication Date: 1998
• Subjects: gain -- k. p -- laser -- quantum well -- modulation response -- bandstructure; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/58451
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : Effects of non-parabolicity and band-warping of the energy dispersion are entered in a quantum well laser simulator (MINILASE-II), which self-consistently solves Schödinger's equation, Poisson's equation, the drift diffusion equations, and the photon rate equations. An eight band k.p model is used to determine the electronic band structure for a strained-layer In.2 Ga.8 As/Al.1 Ga.9 As system. The k.p calculation is performed independently of the laser simulator, and exported to MINILASE-II in the form of a density of states and an energydependent averaged momentum matrix element. The results obtained for the gain and modulation response are compared to those obtained from a parabolic band model with a constant matrix element.