Monte Carlo Simulations of Impact Ionization Feedback in MOSFET Structures. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Bude, Jeff D.
• Is Part Of: VLSI design. Volume 8:Issue 1/4(1998)
• Page Start: 13
• Page End: 19
• Publication Date: 1998
• Subjects: Impact ionization -- feedback -- flash EEPROM -- secondaries -- distribution function tails; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/10649
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : Although impact ionization feedback is recognized as an important current multiplication mechanism, its importance as a carrier heating mechanism has been largely overlooked. This work emphasizes the inclusion of impact ionization feedback in Monte Carlo device simulations, and its implications for carrier heating in sub-micron CMOS and EEPROM technologies.