Modeling of Thermal Effects in Semiconductor Structures. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Snowden, Christopher M.
• Is Part Of: VLSI design. Volume 8:Issue 1/4(1998)
• Page Start: 53
• Page End: 58
• Publication Date: 1998
• Subjects: Thermal -- modeling -- semiconductor -- electro-thermal -- pseudomorphic -- HEMT -- transistors; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/69743
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling active devices. The model is applied to the non-isothermal simulation of pseudomorphic high electron mobility transistors (pHEMTs). A large-scale surface temperature model is described which allows thermal modelling of semiconductor devices and monolithic circuits. An example of the application of thermal modelling to monolithic circuit characterization is given.