A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Kosina, H.; Harrer, M.
• Is Part Of: VLSI design. Volume 6:Issue 1/4(1998)
• Page Start: 205
• Page End: 208
• Publication Date: 1998
• Subjects: Monte Carlo Method -- Hot Carrier -- Transport -- Semiconductor -- Valence Band -- Modeling; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/83430
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : To represent the valence bands of cubic semiconductors a coordinate transformation is proposed such that the hole energy becomes an independent variable. This choice considerably simplifies the evaluation of the integrated scattering probability and the choice of the state after scattering in a Monte Carlo procedure. In the new coordinate system, a numerically given band structure is expanded into a series of spherical harmonics. This expansion technique is capable of resolving details of the band structure at the Brillouin zone boundary and hence can span an energy range of several electron-volts. Results of a Monte Carlo simulation employing the new band representation are shown.