Hot Electron Modelling of HEMTs. Issue 1 (2001)

• Record Type: Journal Article
• Authors: Cole, Eric A. B.; Snowden, Christopher M.; Hussain, Shahzad
• Is Part Of: VLSI design. Volume 13:Issue 1/4(2001)
• Page Start: 287
• Page End: 293
• Publication Date: 2001
• Subjects: HEMT -- Schrödinger -- Poisson -- Current-continuity -- Hot electron; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/2001/57564
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : The hot-electron two-dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells. A method is described for pinning the conduction band at the contact edge to produce an extremely stable numerical solution. Results are presented for an eight layer GaAs-ALGaAs-InGaAs device.