Transient Phenomena in High Speed Bipolar Devices. Issue 1 (1998)
- Record Type:
- Journal Article
- Title:
- Transient Phenomena in High Speed Bipolar Devices. Issue 1 (1998)
- Main Title:
- Transient Phenomena in High Speed Bipolar Devices
- Authors:
- Obrecht, Michael S.
Heasell, Edwin L.
Vlach, J.
Elmasry, Mohamed I. - Abstract:
- Abstract : A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/ emitter partitioning is not valid in general. High level injection increases the collector fraction, whilst fast switching decreases it.
- Is Part Of:
- VLSI design. Volume 8:Issue 1/4(1998)
- Journal:
- VLSI design
- Issue:
- Volume 8:Issue 1/4(1998)
- Issue Display:
- Volume 8, Issue 1/4 (1998)
- Year:
- 1998
- Volume:
- 8
- Issue:
- 1/4
- Issue Sort Value:
- 1998-0008-NaN-0000
- Page Start:
- 475
- Page End:
- 480
- Publication Date:
- 1998
- Subjects:
- BJT capacitance -- transient semiconductor device simulation
Integrated circuits -- Very large scale integration -- Periodicals
621.395 - Journal URLs:
- https://www.hindawi.com/journals/vlsi/ ↗
- DOI:
- 10.1155/1998/35648 ↗
- Languages:
- English
- ISSNs:
- 1065-514X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 10177.xml