Cite
APA Citation
Zheng, X., Feng, S., Gao, Y., Zhang, Y., Jia, Y., & Pan, S. (2019). a voltage-transient method for characterizing traps in GaN HEMTs. Microelectronics and reliability, 93, 57–60. http://access.bl.uk/ark:/81055/vdc_100077205860.0x000049