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HARVARD Citation
Zheng, X. et al. (2019). A voltage-transient method for characterizing traps in GaN HEMTs. Microelectronics and reliability. pp. 57-60. [Online].
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Zheng, X. et al. (2019). A voltage-transient method for characterizing traps in GaN HEMTs. Microelectronics and reliability. pp. 57-60. [Online].