Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon. (8th March 2017)

• Record Type: Journal Article
• Authors: Wolter, Sascha J; Geisler, Dennis; Hensen, Jan; Köntges, Marc; Kajari-Schröder, Sarah; Bahnemann, Detlef W; Brendel, Rolf
• Is Part Of: Semiconductor science and technology. Volume 32:Number 4(2017:Apr.)
• Publication Date: 2017-03-08
• Subjects: mesoporous silicon -- p-type -- self-organized -- ellipsometry -- statistical design of experiments -- empirical model; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa5bb7
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.