Variable range hopping crossover and magnetotransport in PLD grown Sb doped ZnO thin film. (13th March 2017)

• Record Type: Journal Article
• Authors: Mukherjee, Joynarayan; Mannam, Ramanjaneyulu; Rao, M S Ramachandra
• Is Part Of: Semiconductor science and technology. Volume 32:Number 4(2017:Apr.)
• Publication Date: 2017-03-13
• Subjects: variable range hopping -- magnetoresistance -- Sb doped ZnO -- thin film; 72.20.Ee -- 72.20.My -- 73.50.-h; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa5fcc
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We report on the variable range hopping (VRH) crossover in the electrical transport of Sb doped ZnO (SZO) thin film. Structural, chemical, electrical and magnetotransport properties were carried out on SZO thin film grown by pulsed laser deposition. X-photoelectron spectroscopy study confirms the presence of both Sb 3+ (33%) and Sb 5+ (67%) states. Sb doped ZnO thin film shows n-type behavior which is attributed to the formation of SbZn and/or SbZn –VZn defect complex. Temperature dependent resistivity measurement showed that in a low temperature regime ( < 90 K) transport is governed by the 3D-VRH mechanism. A crossover from 3D-VRH to Efros–Shklovoski VRH was observed around 12 K. Negative magnetoresistance (MR) is observed in the entire temperature range (300–5 K), however, there is an upturn in the MR behavior at 5 K suggesting the existence of a positive component. The MR behavior of Sb doped ZnO thin films is explained by the Khosla and Fischer model.