Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors. (April 2015)

• Record Type: Journal Article
• Authors: Chakraborty, Avik; Sarkar, Angsuman
• Is Part Of: Superlattices and microstructures. Volume 80(2015)
• Page Start: 125
• Page End: 135
• Publication Date: 2015-04
• Subjects: Tunnel FET (TFET) -- Staggered heterojunction -- Band-to-band tunneling (BTBT) -- Intrinsic gain -- Transconductance-to-drive current ratio -- Cutoff frequency fT -- Output resistance Rout; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.01.005
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: Comparison of the analog/RF performance between III–V HETJ TFET, HJ TFET and HETJ MOSFET. HETJ TFET outperforms HJ TFET. HETJ TFET outperforms HETJ MOSFET in terms of R out, and intrinsic gain. HETJ TFET outperforms HETJ MOSFET in terms of TGF, gm at low gate bias. Abstract: In this paper, the analog/RF performance of an III–V semiconductor based staggered hetero-tunnel-junction (HETJ) n-type nanowire (NW) tunneling FET (n-TFET) is investigated, for the first time. The device performance figure-of-merits governing the analog/RF performance such as transconductance ( g m ), transconductance-to-drive current ratio ( g m / I DS ), output resistance ( R out ), intrinsic gain and unity-gain cutoff frequency ( f T ) have been studied. The analog/RF performance parameters is compared between HETJ NW TFET and a homojunction (HJ) NW n-type TFET of similar dimensions. In addition to enhanced I ON and subthreshold swing, a significant improvement in the analog/RF performance parameters obtained by the HETJ n-TFET over HJ counterpart for use in analog/mixed signal System-on-Chip (SoC) applications is reported. Moreover, the analog/RF performance parameters of a III–V based staggered HETJ NW TFET is also compared with a heterojunction (HETJ) NW n-type MOSFET having same material as HETJ n-TFET and equal dimension in order to provide a systematic comparison between HETJ-TFET and HETJ-MOSFET for use in analog/mixed-signal applications. The results reveal that HETJ n-TFET provides higher R out and hence, a higher intrinsic gain, an improved g m / I DS ratio, and reasonable f T at lower values of gate-overdrive voltage as compared to the HETJ NW n-MOSFET.