Modeling simplification for thermal mechanical stress analysis of TSV interposer stack. (May 2019)

• Record Type: Journal Article
• Authors: Xia, Kequan; Zhu, Zhiyuan; Zhang, Hongze; Xu, Zhiwei
• Is Part Of: Microelectronics and reliability. Volume 96(2019)
• Page Start: 46
• Page End: 50
• Publication Date: 2019-05
• Subjects: Three dimensional integration -- Generalized plane deformation (GPD) mode -- Through silicon via (TSV); Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.03.008
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The generalized plane deformation (GPD) mode is a simplified model that effectively reflects the information of whole chip and local regions. In this paper, we propose a modified-GPD model for thermal-stress analysis of through silicon via (TSV) interposer application. Highly doped poly silicon is used to fill TSV in our modeling. The boundary conditions are optimized. The accuracy is largely improved and the computation time is reduced compared with conventional GPD model. Highlights: We propose a modified-GPD model for thermal-stress analysis of through silicon via (TSV) interposer application. The boundary conditions are optimized for simplification. The accuracy is largely improved compared with conventional GPD model. The computation time is reduced compared with conventional GPD model and quarter model.