Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks. (July 2019)

• Record Type: Journal Article
• Authors: Tyagi, Prashant; Ramesh, Ch; Sharma, Alka; Husale, Sudhir; Kushvaha, S.S.; Senthil Kumar, M.
• Is Part Of: Materials science in semiconductor processing. Volume 97(2019)
• Page Start: 80
• Page End: 84
• Publication Date: 2019-07
• Subjects: GaN -- Nanocrystalline materials -- Epitaxial growth -- Field-emission -- Photo-detection; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.03.015
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.