Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films. (June 2019)

• Record Type: Journal Article
• Authors: Dominguez, Miguel A.; Pau, Jose Luis; Orduña-Diaz, Abdu; Redondo-Cubero, Andres
• Is Part Of: Solid-state electronics. Volume 156(2019)
• Page Start: 12
• Page End: 15
• Publication Date: 2019-06
• Subjects: Zinc nitride -- Thin-film transistors -- Transparent devices -- AZO -- Spin-on glass; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.03.032
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Al and AZO are used as source/drain electrodes in room-temperature based Zn3 N2 TFTs. The fabrication and characterization of fully transparent Zn3 N2 TFTs is presented. The fabrication procedure is compatible with flexible electronics. Abstract: In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn3 N2 ) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10 4 and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm 2 /Vs and 1 cm 2 /Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn3 N2 TFTs, reported for first time in this work.