Engineering of chalcogenide materials for embedded applications of Phase Change Memory. (September 2015)
- Record Type:
- Journal Article
- Title:
- Engineering of chalcogenide materials for embedded applications of Phase Change Memory. (September 2015)
- Main Title:
- Engineering of chalcogenide materials for embedded applications of Phase Change Memory
- Authors:
- Zuliani, Paola
Palumbo, Elisabetta
Borghi, Massimo
Dalla Libera, Giovanna
Annunziata, Roberto - Abstract:
- Highlights: PCM is proposed as key differentiator for next generation embedded applications. Overcoming limitations of PCM for high temperature data retention is discussed. Chalcogenides can be engineered in the Ge-rich region of Ge–Sb–Te ternary diagram. The trade-off between cell performances and RESET thermal stability is discussed. Selected alloys show reliability performance in line with automotive specifications. Abstract: Phase Change Memory technology can be a real breakthrough for process cost saving and performances for embedded applications. The feasibility at 90 nm technology node has been solidly proven in an industrial environment and the added value of this solution demonstrated. Nevertheless, for specific applications some improvement in High Temperature Data Retention (HTDR) characteristics is needed. In this work we present the engineering of chalcogenide materials in order to increase the stability of RESET state as a function of temperature. This goal has been achieved by exploring Ge-rich compounds in the Ge–Sb–Te ternary diagram. In particular, an optimized Ge x Sb y Te z Phase Change material, able to guarantee code integrity of the memory content after soldering thermal profile and data retention in extended temperature range has been obtained. Extrapolation of data retention at 10 years for temperatures higher than 150 °C cell-level has been demonstrated, thus enabling automotive applications.
- Is Part Of:
- Solid-state electronics. Volume 111(2015)
- Journal:
- Solid-state electronics
- Issue:
- Volume 111(2015)
- Issue Display:
- Volume 111, Issue 2015 (2015)
- Year:
- 2015
- Volume:
- 111
- Issue:
- 2015
- Issue Sort Value:
- 2015-0111-2015-0000
- Page Start:
- 27
- Page End:
- 31
- Publication Date:
- 2015-09
- Subjects:
- Phase-change memories (PCM) -- Nonvolatile memories -- Ge–Sb–Te compounds -- GST -- HTDR
Semiconductors -- Periodicals
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00381101 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.sse.2015.04.009 ↗
- Languages:
- English
- ISSNs:
- 0038-1101
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8327.385000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 9757.xml