Analysis of anisotropic in-plane strain behavior in condensed Si1−xGex fin epitaxial layer using X-ray reciprocal space mapping. (4th February 2019)

• Record Type: Journal Article
• Authors: Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Choi, Yongjoon; Shin, Chan-Soo; Ko, Dae-Hong
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 3(2019)
• Publication Date: 2019-02-04
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aafb63
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Epitaxial Si1− x Ge x fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a dry oxidation process for the Si1− x Ge x fin layers, the Ge was condensed by up to ca. 90% while anisotropic in-plane strain was induced. To analyze the anisotropic in-plane strain behavior, reciprocal space mapping measurements were performed in the directions parallel and perpendicular to the fins. After the condensation, a compressive strain of ca. 1% was induced in the direction parallel to the fin. We discuss the uniaxial stress factor influencing the anisotropic in-plane strain of the condensed Si1− x Ge x fin layer in the two trench patterns.