Analysis of current transport mechanisms in sol-gel grown Si/ZnO heterojunction diodes in high temperature environment. (April 2019)

• Record Type: Journal Article
• Authors: Singh, Satyendra Kumar; Hazra, Purnima
• Is Part Of: Superlattices and microstructures. Volume 128(2019)
• Page Start: 48
• Page End: 55
• Publication Date: 2019-04
• Subjects: Semiconductor thin film -- Heterojunction diode -- Current-voltage characteristics -- Trap-assisted tunneling -- Spatial barrier inhomogeneities -- Richardson constant; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2019.01.013
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: This paper analyzes the electrical parameters of Si/ZnO heterojunction diodes in the wide temperature range, i.e. from room temperature (298 K) to 573 K to study the electrical performance of the diode in very high temperature environment. In this work, sol-gel derived nanostructured ZnO thin film was deposited directly on p-Si substrate using spin coating technique. Electrical parameters, such as rectification ratio, reverse saturation current, ideality factor, barrier height, series resistance and activation energy are derived from current-voltage characteristics of the device, measured using semiconductor parameter analyzer in the temperature range of 298 K–573 K for bias voltage of ±5 V. The ideality factor, barrier height and series resistance is derived as 2.66, 0.789 eV and 3554 Ω respectively at 298 K, whereas at 573 K these are modified as 1.58, 1.15 eV and 801 Ω respectively. The above-mentioned results indicate the presence of spatial barrier height inhomogeneities (BHI) in high temperature environment. Hence, we have included the Gaussian distribution of spatial BHI in our analysis to calculate the effective Richardson constant (RC). Before inclusion of spatial BHI, RC was 4.026 × 10 −6 Acm −2 K −2 . However, after inclusion of spatial BHI, RC is modified to 29.14 Acm −2 K −2, which is nearer to the theoretical value (32 Acm −2 K −2 ). Therefore, this study indicates that our as-fabricated Si/ZnO heterojunction diodes can sustain their electrical behaviour in very high temperature environment also and they are suitable for high temperature electronic and optoelectronic application. Highlights: Synthesize ZnO thin film on p-Si substrate using Sol-gel Spin coating method. Electrical parameters of Si/ZnO heterojunction diode are derived experimentally. Results are analyzed using trap-assisted tunneling and barrier height inhomogeneities. Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. Modified R constant is 29.14 Acm −2 K −2, i.e. nearer to theoretical value 32 Acm −2 K −2 .