Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes. (April 2019)

• Record Type: Journal Article
• Authors: Rackauskas, B.; Uren, M.J.; Kachi, T.; Kuball, M.
• Is Part Of: Microelectronics and reliability. Volume 95(2019)
• Page Start: 48
• Page End: 51
• Publication Date: 2019-04
• Subjects: Reliability -- Lifetime -- GaN-on-GaN -- MTTF -- Vertical pn diode; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.02.013
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This work presents the first lifetime estimation of vertical GaN-on-GaN pn diodes using a step stress measurement technique with analysis not previously applied to GaN. The failure mechanism is surface breakdown, indicating that the lifetime is not yet limited by intrinsic material properties but by device design. As such, the mean time to failure depends on the peripheral length of the device. An estimated operating MTTF of 10 years at a reverse bias stress of 260 V was calculated for a 126 μm diameter diode. Highlights: The first lifetime estimations of vertical GaN-on-GaN pn diodes are presented. Analysis of step-stress measurements using Weibull statistics is applied to GaN devices for the first time. Failure is shown to be surface related with the MTTF dependent only on the length of the device periphery. A MTTF of 10 years can be achieved at an operating voltage of 260 V for the smallest devices.