Investigation of Fe-doped room temperature dilute magnetic ZnO semiconductors. (15th June 2019)

• Record Type: Journal Article
• Authors: Simões Valentin, Carolyne Beatriz; de Sousa e Silva, Raphael Lucas; Banerjee, P.; Franco, A.
• Is Part Of: Materials science in semiconductor processing. Volume 96(2019)
• Page Start: 122
• Page End: 126
• Publication Date: 2019-06-15
• Subjects: Spintronics -- Dilute magnetic semiconductor -- Optical property -- XRD -- Dielectric constant -- Hysteresis loops; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.02.021
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Different ceramics sample of Zn 1 − x Fe x O (ZFO) series have been sintered by solid state reaction method. Single phase polycrystalline Fe-doped ZnO sample with hexagonal wurtzite structure has been obtained with x < 0.03 mol. Segregation of Fe and/or its oxides have not been found in the XRD patterns. A weak secondary phase of ZnFe 2 O 4 has been detected with x ⩾ 0.03 mol. Presence of Ohmic conductivity has been detected in the dielectric property analysis and the reasons for this Maxwell-Wagner-Sillars (MWS) relaxation has been explained by the grain boundary barrier defect (GBBD) process. The obtained shift of diamagnetic behavior of pure ZnO samples to para-magnetic for ZFO samples has been established with the defect and impurity structure. The band gap energy for ZFO samples has been calculated between 2.85 eV to 3.15 eV . The results indicate the potential use of Fe doped ZnO ceramics in high frequency device applications.