Enhanced front-illuminated p-i-p-i-n GaN/AlGaN ultraviolet avalanche photodiodes. (15th June 2019)

• Record Type: Journal Article
• Authors: Cai, Qing; Dong, Kexiu; Xie, Zili; Tang, Yin; Xue, Junjun; Chen, Dunjun
• Is Part Of: Materials science in semiconductor processing. Volume 96(2019)
• Page Start: 24
• Page End: 29
• Publication Date: 2019-06-15
• Subjects: Front illuminated -- Avalanche photodiodes -- Ultraviolet -- Heterostructure; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.02.019
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We proposed an improved front-illuminated GaN/AlGaN separate absorption and multiplication (SAM) ultraviolet avalanche photodiode (APD) based on physical analysis and device simulations. By inserting an Al0.2 Ga0.8 N p-type layer into the p-i-p-i-n APD structure, a built-in electric field resulted from polarization effect will be introduced to facilitate the transport of electrons from absorption layer to multiplication region. The enhanced heterostructure APD presents significantly higher multiplication gain compared with the homogeneous one. Moreover, the doping concentration and thickness of the interlayer were optimized according to device performances, because the interlay has important effects on the electric field distribution and energy-band profile of the front-illuminated SAM APD.