Analysis of electrical properties of forward-to-open (Ti, Cu)Ox memristor rectifier with elemental gradient distribution prepared using (multi)magnetron co-sputtering process. (May 2019)

• Record Type: Journal Article
• Authors: Domaradzki, Jaroslaw; Wiatrowski, Artur; Kotwica, Tomasz; Mazur, Michal
• Is Part Of: Materials science in semiconductor processing. Volume 94(2019)
• Page Start: 9
• Page End: 14
• Publication Date: 2019-05
• Subjects: Memristor -- Gradient thin film -- Oxide semiconductor -- Magnetron sputtering; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.01.034
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The paper presents a discussion on memristive-like properties observed in metal/semiconducting-oxide/metal structure containing a semiconducting (Tix Cu1-x )Ox thin film with asymmetrical elemental Cu distribution over the thin film thickness. The thin film was prepared using a combinatorial multi-magnetron sputtering process. Based on current-to-voltage electrical investigations, a sharp forward-to-open rectifying behaviour was observed with a hysteresis loop in the forward bias conditions only. Detailed structure and elemental profile investigations allowed to propose explanation of observed type of resistive transition.