CVD growth of monolayer WS2 through controlled seed formation and vapor density. (April 2019)

• Record Type: Journal Article
• Authors: Yorulmaz, Büşra; Özden, Ayberk; Şar, Hüseyin; Ay, Feridun; Sevik, Cem; Perkgöz, Nihan Kosku
• Is Part Of: Materials science in semiconductor processing. Volume 93(2019)
• Page Start: 158
• Page End: 163
• Publication Date: 2019-04
• Subjects: WS2 -- Monolayer -- CVD -- TMDCs -- Seed; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.12.035
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Large area, single layer WS2 has a high potential for use in optoelectrical devices with its high photoluminescence intensity and low response time. In this work, we demonstrate a systematic study of controlled tungsten disulfide (WS2 ) monolayer growth using chemical vapor deposition (CVD) technique. With a detailed investigation of process parameters such as H2 gas inclusion into the main carrier gas, growth temperature and duration, we have gained insight into two-dimensional (2D) WS2 synthesis through controlling the seed formations and the radical vapor density associated with WO3 . We confirm that H2 gas, when included to the carrier gas, is directly involved in WO3 reduction due to its reductive reagent nature, which provides a more effective sulfurization and monolayer formation process. Additionally, by changing the CVD growth configuration, hence, increasing the tungsten related vapor density and confining the reactant radicals, we succeed in realizing larger WS2 monolayers, which is still a technological challenge in order to utilize these structures for practical applications. Further optimization of the growth procedure is demonstrated by tuning the growth duration to prevent the excess seed formations and additional layers which will possibly limit the device performance of the monolayer flakes or films when applied.