Cite
HARVARD Citation
Prystawko, P. et al. (2019). Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor. Materials science in semiconductor processing. pp. 153-157. [Online].
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Prystawko, P. et al. (2019). Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor. Materials science in semiconductor processing. pp. 153-157. [Online].