Cation-anion codoping to enhance thermoelectric performance of BiSbSe3. (April 2019)

• Record Type: Journal Article
• Authors: Zhang, De; Lei, Jingdan; Guan, Weibao; Ma, Zheng; Cheng, Zhenxiang; Zhang, Lijuan; Wang, Chao; Wang, Yuanxu
• Is Part Of: Materials science in semiconductor processing. Volume 93(2019)
• Page Start: 299
• Page End: 303
• Publication Date: 2019-04
• Subjects: Thermoelectric materials -- Cation-anion codoping -- BiSbSe3; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.01.021
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: To improve the thermoelectric performance of n -type BiSbSe3, the cation and anion codoping was implemented by doping SnCl4 . SnCl4 doping mainly regulate the relationship between electrical conductivity and Seebeck coefficient, which is an effective way to enhance the figure of merit ZT . SnCl4 doping can decompose into cation and anion which provide electrons and thus increase carrier concentration. The optimum carrier concentration was obviously increased to 1.17 × 10 20 cm − 3 . The electrical conductivity boosts from 0.05 to 5087 Sm − 1 at 300 K. Coupled with the intrinsically suppressed thermal conductivity originating from weak chemical band and grain refinement, a higher ZT of 0.61 is obtained at 773 K for (Bi, Sb)1.95 Sn0.05 Se2.8 Cl0.2, which is ten times higher than that of the un-doped BiSbSe3 .