The influence of Ag doping and annealing on phase, structural and carrier transport characteristics of CIS thin films. (April 2019)

• Record Type: Journal Article
• Authors: Yan, Qiang; Chen, Zhuo; Zhao, Yue; Wang, Linjun
• Is Part Of: Materials science in semiconductor processing. Volume 93(2019)
• Page Start: 12
• Page End: 20
• Publication Date: 2019-04
• Subjects: CIS -- Annealing -- Optical-electrical Properties -- Doping -- Photocurrent; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.12.024
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstracts: The un-doped and Ag-CIS thin films were deposited on quartz glass substrates by single source thermal evaporation method. Then, some CIS films were annealed in vacuum or N2 atmosphere from 350 °C to 550 °C. The results of XRD patterns showed the phase compositions of CIS thin films were changed with the increase of annealing temperature. Meanwhile, the results of Raman measurement confirmed a dramatic transition from CA phase to CH phase. Furthermore, the Ag atoms could promote the recrystallization process and the transition from CA phase to CH phase, which might result in the improvement of optical-electrical properties of CIS film. The transient photocurrent of the CIS-3 sample annealed at 450 °C was higher than those of other samples, which might be related to the good crystal quality. The results of I-V curves confirmed the N-type conduction of CIS-3 films, which was consistent with the results of EDS measurement. The C-V results of CIS-2 films also were the same as the results of EDS measurement. Furthermore, for the CIS-2 samples, with increase of annealing temperature, the change of conduction type may be related to the S element volatilization under vacuum situation and the decomposition of the substitutional defects AgIn .