Combustion synthesis of nontoxic water-induced InYO thin film and application in thin film transistor. (April 2019)

• Record Type: Journal Article
• Authors: Li, Jun; Zhou, You-Hang; Zhu, Wen-Qing; Zhang, Jian-Hua; Zhang, Zhi-Lin
• Is Part Of: Materials science in semiconductor processing. Volume 93(2019)
• Page Start: 201
• Page End: 207
• Publication Date: 2019-04
• Subjects: Thin films -- Amorphous materials -- Sol-gel chemistry -- Electrical properties; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.12.033
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In the work, novel indium yttrium oxide (InYO) thin films are prepared by an environmentally friendly aqueous solution process. Y element is added to suppress the generation of oxygen vacancies. The effect of Y doping on the performance and stability of nontoxic water-induced InYO thin film transistors (TFTs) is firstly examined. With the increase of Y doping contents, off-state current is decreased and mobility decreases from 15.8 to 11.7 cm 2 V −1 s −1 . Furthermore, the stability under positive bias stress is also obviously improved. The device with 2 mol% Y element shows an optimized electrical performance and good stability, including mobility of 12.8 cm 2 /V s, threshold voltage of 1.4 V, subthreshold swing of 0.33 V/decade and threshold voltage shift of 2.31 V under positive voltage stress of 5 V for 10, 000 s. The performance improvement is attributed to the decrease of oxygen vacancies and the decline of interface trap density by Y addition.