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APA Citation
Chee, S., Seo, D., Kim, H., Jang, H., Lee, S., Moon, S. P., Lee, K. H., Kim, S. W., Choi, H., & Ham, M. (2019). lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors. Advanced materials, 31(2), n/a. http://access.bl.uk/ark:/81055/vdc_100076781012.0x000034