Cite
HARVARD Citation
Chee, S. et al. (2019). Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors. Advanced materials. 31 (2), p. n/a. [Online].
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Chee, S. et al. (2019). Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors. Advanced materials. 31 (2), p. n/a. [Online].