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APA Citation
Hwang, J., Kim, J., Kim, H., Kim, S., Lee, K. H., & Kim, S. W. (2018). effect of Dislocation Arrays at Grain Boundaries on Electronic Transport Properties of Bismuth Antimony Telluride: Unified Strategy for High Thermoelectric Performance. Advanced energy materials, 8(20), n/a. http://access.bl.uk/ark:/81055/vdc_100066535940.0x000014