Cite
MLA Citation
Shuxiang Sun et al.. “Proton Irradiation Effect on InP‐Based High Electron Mobility Transistor by Numerical Simulation with Non‐Uniform Induced Acceptor‐Like Defects.” Physica status solidi, vol. 12, no. 6, 2018, p. n/a. http://access.bl.uk/ark:/81055/vdc_100066418457.0x00000e