Cite
MLA Citation
Jaemyung Kim et al.. “Characterization of a 4-inch GaN wafer by X-ray diffraction topography.” CrystEngComm, vol. 20, no. 48, 2018, pp. 7761–7765. http://access.bl.uk/ark:/81055/vdc_100076251124.0x000042
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Jaemyung Kim et al.. “Characterization of a 4-inch GaN wafer by X-ray diffraction topography.” CrystEngComm, vol. 20, no. 48, 2018, pp. 7761–7765. http://access.bl.uk/ark:/81055/vdc_100076251124.0x000042