Cite
HARVARD Citation
Kim, J. et al. (2018). Characterization of a 4-inch GaN wafer by X-ray diffraction topography. CrystEngComm. 20 (48), pp. 7761-7765. [Online].
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Kim, J. et al. (2018). Characterization of a 4-inch GaN wafer by X-ray diffraction topography. CrystEngComm. 20 (48), pp. 7761-7765. [Online].