Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN. (13th June 2016)

• Record Type: Journal Article
• Authors: Kuritzky, L Y; Becerra, D L; Abbas, A Saud; Nedy, J; Nakamura, S; DenBaars, S P; Cohen, D A
• Is Part Of: Semiconductor science and technology. Volume 31:Number 7(2016:Jul.)
• Publication Date: 2016-06-13
• Subjects: GaN -- laser diodes -- chemically assisted ion beam etching -- facets -- nonpolar -- semipolar -- dry etching; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/7/075008
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ∼60 nm min −1 for ( 20 2 ̄ 1 ̄ ), ( 20 2 ̄ 1 ), and m -plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar ( 20 2 ̄ 1 ̄ ) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.