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HARVARD Citation
Seoane, N. et al. (n.d.). Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes. Semiconductor science and technology. p. . [Online].
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Seoane, N. et al. (n.d.). Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes. Semiconductor science and technology. p. . [Online].